MJE2955T
  • 量产中
  • EAR99
产品描述:
MJE2955T Series PNP 60 V 10 A Complementary Silicon Power Transistor - TO-220
标准包装:50
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Packaging: Tube
Width: 4.6 mm (Max)
Minimum Operating Temperature: - 55 C
Package / Case: TO-220-3
Gain Bandwidth Product fT: 2 MHz
Unit Weight: 0.211644 oz
Emitter- Base Voltage VEBO: 5 V
DC Current Gain hFE Max: 70
Length: 10.4 mm (Max)
Manufacturer: STMicroelectronics
Transistor Polarity: PNP
Brand: STMicroelectronics
Product Category: Bipolar Transistors - BJT
Maximum Operating Temperature: + 150 C
Collector- Base Voltage VCBO: 70 V
Collector-Emitter Saturation Voltage: 1.1 V
Pd - Power Dissipation: 75 W
Height: 9.15 mm (Max)
Configuration: Single
Mounting Style: Through Hole
Maximum DC Collector Current: 10 A
Continuous Collector Current: 10 A
DC Collector/Base Gain hfe Min: 20
Series: 500V Transistors
Factory Pack Quantity: 1000
RoHS:  Details
Collector- Emitter Voltage VCEO Max: 60 V
ECCN EAR99
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