EMX1DXV6T1G specifications -Ameya360 electronic components purchase network


EMX1DXV6T1G

ACTIVE EAR99
Product description : Dual NPN General Purpose Amplifier Transistor
SPQ：1
Datasheet : EMX1DXV6T1G.pdf

Packaging:	Reel
Width:	1.2 mm
Minimum Operating Temperature:	- 55 C
Package / Case:	SOT-563-6
Gain Bandwidth Product fT:	180 MHz
Unit Weight:	0.000289 oz
Emitter- Base Voltage VEBO:	7 V
Length:	1.6 mm
DC Collector/Base Gain hfe Min:	120
Series:	EMX1
Factory Pack Quantity:	4000
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	50 V
ECCN	EAR99
Collector- Base Voltage VCBO:	60 V
Collector-Emitter Saturation Voltage:	0.4 V
Pd - Power Dissipation:	357 mW
Height:	0.55 mm
Configuration:	Dual
Mounting Style:	SMD/SMT
Maximum DC Collector Current:	0.1 A
Continuous Collector Current:	0.1 A
Manufacturer:	ON Semiconductor
Transistor Polarity:	NPN
Brand:	ON Semiconductor
Product Category:	Bipolar Transistors - BJT
Maximum Operating Temperature:	+ 150 C

Datasheet： EMX1DXV6T1G.pdf

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Stock code :	209455
Mfg name :	onsemi
MPN :	EMX1DXV6T1G
Product description :	Dual NPN General Purpose Amplifier Transistor

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