SI1029X-T1-GE3 specifications -Ameya360 electronic components purchase network


SI1029X-T1-GE3

ACTIVE SC-89-6 EAR99
Product description : Dual N & P Channel 60 V 1.4 / 4 Ohm Surface Mount Mosfet - SC-89-6
SPQ：1
Datasheet : SI1029X-T1-GE3.pdf

Power - Max	250mW
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 500mA, 10V
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	305mA, 190mA
Part Status	Active
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Vgs(th) (Max) @ Id	2.5V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Digi-Reel®
Package / Case	SOT-563, SOT-666
FET Feature	Logic Level Gate
Supplier Device Package	SC-89-6
Gate Charge (Qg) @ Vgs	0.75nC @ 4.5V
Category	Discrete Semiconductor Products
FET Type	N and P-Channel
Family	Transistors - FETs, MOSFETs - Arrays
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	30pF @ 25V
ECCN	EAR99

Datasheet： SI1029X-T1-GE3.pdf

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Stock code :	208884
Mfg name :	Vishay
MPN :	SI1029X-T1-GE3
Product description :	Dual N & P Channel 60 V 1.4 / 4 Ohm Surface Mount Mosfet - SC-89-6

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