| NTHD3100CT1G | ||
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| 产品描述：
N&P-Channel 20 V 80 mOhm 2.3 nC 1.1 W SMT Power Mosfet - ChipFET-8
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| 标准包装：1 | ||
| 数据手册： |
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| Rds On - Drain-Source Resistance: | 77 mOhms, 85 mOhms |
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| Width: | 1.65 mm |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Height: | 1.05 mm |
| Vgs - Gate-Source Voltage: | 12 V, 8 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 10.7 ns, 11.7 ns |
| Length: | 3.05 mm |
| Manufacturer: | ON Semiconductor |
| Transistor Polarity: | N-Channel, P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 9.6 ns, 16 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Type: | MOSFET |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Reel |
| Product: | MOSFET Small Signal |
| Pd - Power Dissipation: | 1.1 W |
| Package / Case: | ChipFET-8 |
| Configuration: | N-Channel, P-Channel |
| Unit Weight: | 0.002998 oz |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 6.3 ns, 5.8 ns |
| Forward Transconductance - Min: | 6 S, 8 S |
| Series: | NTHD3100C |
| Factory Pack Quantity: | 3000 |
| Brand: | ON Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | 3.9 A |
| Rise Time: | 10.7 ns, 11.7 ns |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| ECCN | EAR99 |
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