MUN5312DW1T1G specifications -Ameya360 electronic components purchase network


MUN5312DW1T1G

ACTIVE SC-88/SC70-6/SOT-363
Product description : MUN Series 50 V 100 mA 22 kOhm NPN/PNP Dual Bias Resistor Transistor - SOT-363
SPQ：1
Datasheet : MUN5312DW1T1G.pdf

Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Resistor - Base (R1) (Ohms)	22k
Power - Max	250mW
Resistor - Emitter Base (R2) (Ohms)	22k
PCN Design/Specification	Copper Wire 08/Jun/2009
Online Catalog	NPN, PNP Pre-Biased Transistor Arrays
Family	Transistors (BJT) - Arrays, Pre-Biased
Current - Collector Cutoff (Max)	500nA
Packaging	Cut Tape (CT)
Package / Case	6-TSSOP, SC-88, SOT-363
PCN Assembly/Origin	Wafer Source Addition 26/Nov/2014
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package	SC-88/SC70-6/SOT-363
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Mounting Type	Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 10V
RoHS	Lead free / RoHS Compliant

Datasheet： MUN5312DW1T1G.pdf

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Stock code :	20688
Mfg name :	onsemi
MPN :	MUN5312DW1T1G
Product description :	MUN Series 50 V 100 mA 22 kOhm NPN/PNP Dual Bias Resistor Transistor - SOT-363

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