SI4288DY-T1-GE3 specifications -Ameya360 electronic components purchase network


SI4288DY-T1-GE3

ACTIVE EAR99
Product description : Dual N-Channel 40 V 20 mOhm 2 W Surface Mount TrenchFET Mosfet - SOIC-8
SPQ：1
Datasheet : SI4288DY-T1-GE3.pdf

Manufacturer:	Vishay
Packaging:	Reel
Series:	SI4
Minimum Operating Temperature:	- 55 C
Factory Pack Quantity:	2500
Brand:	Vishay Semiconductors
Tradename:	TrenchFET
Package / Case:	SOIC-8
Id - Continuous Drain Current:	9.2 A
Configuration:	Dual
Unit Weight:	0.017870 oz
Mounting Style:	SMD/SMT
ECCN	EAR99
Rds On - Drain-Source Resistance:	20 mOhms
Number of Channels:	2 Channel
Pd - Power Dissipation:	3.1 W
Transistor Polarity:	N-Channel
Technology:	Si
Part # Aliases:	SI4288DY-GE3
RoHS:	Details
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	20 V
Transistor Type:	2 N-Channel
Maximum Operating Temperature:	+ 150 C

Datasheet： SI4288DY-T1-GE3.pdf

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Stock code :	206544
Mfg name :	Vishay
MPN :	SI4288DY-T1-GE3
Product description :	Dual N-Channel 40 V 20 mOhm 2 W Surface Mount TrenchFET Mosfet - SOIC-8

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