IRF630NSTRLPBF specifications -Ameya360 electronic components purchase network


IRF630NSTRLPBF

ACTIVE D2PAK EAR99
Product description : Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - D2PAK
SPQ：1
Datasheet : IRF630NSTRLPBF.pdf

Power - Max	82W
Rds On (Max) @ Id, Vgs	300 mOhm @ 5.4A, 10V
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	9.3A (Tc)
Part Status	Active
Manufacturer	Infineon Technologies
Series	HEXFET®
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 175°C (TJ)
Packaging	Cut Tape (CT)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FET Feature	Standard
Supplier Device Package	D2PAK
Gate Charge (Qg) @ Vgs	35nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	575pF @ 25V
ECCN	EAR99

Datasheet： IRF630NSTRLPBF.pdf

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Stock code :	205760
Mfg name :	Infineon Technologies
MPN :	IRF630NSTRLPBF
Product description :	Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - D2PAK

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