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| 产品描述：
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
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| 标准包装：1 | ||
| 数据手册： |
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| Power - Max | 800mW |
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| Rds On (Max) @ Id, Vgs | 150 mOhm @ 1A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Part Status | Not For New Designs |
| Manufacturer | ON Semiconductor |
| Family | Transistors - FETs, MOSFETs - Single |
| Operating Temperature | 150°C (TJ) |
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| FET Feature | Standard |
| Supplier Device Package | 6-SCH |
| Gate Charge (Qg) @ Vgs | 3.9nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 172pF @ 10V |
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