IRF9952TRPBF specifications -Ameya360 electronic components purchase network


IRF9952TRPBF

ACTIVE EAR99
Product description : Dual N/P-Channel 30 V 0.1/0.15 Ohm 6.9/6.1 nC HEXFET® Power Mosfet - SOIC-8
SPQ：4000
Datasheet : IRF9952TRPBF.pdf

Qg - Gate Charge:	6.9 nC
Packaging:	Reel
Manufacturer:	Infineon
Transistor Polarity:	N-Channel, P-Channel
Technology:	Si
RoHS:	Details
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	20 V
Transistor Type:	1 N-Channel, 1 P-Channel
ECCN	EAR99
Rds On - Drain-Source Resistance:	150 mOhms
Number of Channels:	2 Channel
Pd - Power Dissipation:	2 W
Factory Pack Quantity:	4000
Brand:	Infineon Technologies
Package / Case:	SOIC-8
Id - Continuous Drain Current:	3.5 A
Configuration:	1 N-Channel, 1 P-Channel
Unit Weight:	0.019048 oz
Mounting Style:	SMD/SMT

Datasheet： IRF9952TRPBF.pdf

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Stock code :	203425
Mfg name :	Infineon Technologies
MPN :	IRF9952TRPBF
Product description :	Dual N/P-Channel 30 V 0.1/0.15 Ohm 6.9/6.1 nC HEXFET® Power Mosfet - SOIC-8

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