BSC0902NSI
  • 量产中
  • PG-TDSON-8
产品描述:
30V,2.8mΩ,100A,N-Channel Power MOSFET
标准包装:1
数据手册:
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FET Feature Logic Level Gate
Package / Case 8-PowerTDFN
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 100A (Tc)
FET Type MOSFET N-Channel, Metal Oxide
Series OptiMOS™
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 1500pF @ 15V
RoHS Lead free / RoHS Compliant
Rds On (Max) @ Id, Vgs 2.8 mOhm @ 30A, 10V
Power - Max 48W
Supplier Device Package PG-TDSON-8
Gate Charge (Qg) @ Vgs 32nC @ 10V
Online Catalog N-Channel Logic Level Gate FETs
Family FETs - Single
Vgs(th) (Max) @ Id 2V @ 10mA
Packaging Cut Tape (CT)  
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