BSC0902NSI specifications -Ameya360 electronic components purchase network


BSC0902NSI

ACTIVE PG-TDSON-8
Product description : 30V,2.8mΩ,100A,N-Channel Power MOSFET
SPQ：1
Datasheet : BSC0902NSI.pdf

FET Feature	Logic Level Gate
Package / Case	8-PowerTDFN
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	23A (Ta), 100A (Tc)
FET Type	MOSFET N-Channel, Metal Oxide
Series	OptiMOS™
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	1500pF @ 15V
RoHS	Lead free / RoHS Compliant
Rds On (Max) @ Id, Vgs	2.8 mOhm @ 30A, 10V
Power - Max	48W
Supplier Device Package	PG-TDSON-8
Gate Charge (Qg) @ Vgs	32nC @ 10V
Online Catalog	N-Channel Logic Level Gate FETs
Family	FETs - Single
Vgs(th) (Max) @ Id	2V @ 10mA
Packaging	Cut Tape (CT)

Datasheet： BSC0902NSI.pdf

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