IRFH5210TRPBF specifications -Ameya360 electronic components purchase network


IRFH5210TRPBF

ACTIVE EAR99
Product description : Single N-Channel 100 V 14.9 mOhm 39 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
SPQ：1
Datasheet : IRFH5210TRPBF.pdf

Minimum Operating Temperature:	- 55 C
Rds On - Drain-Source Resistance:	14.9 mOhms
Pd - Power Dissipation:	3.6 W
Package / Case:	PQFN-6
Configuration:	Single
Mounting Style:	SMD/SMT
Fall Time:	6.5 ns
Forward Transconductance - Min:	66 S
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	21 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	100 V
Transistor Type:	1 N-Channel
ECCN	EAR99
Qg - Gate Charge:	40 nC
Packaging:	Reel
Technology:	Si
Vgs th - Gate-Source Threshold Voltage:	2 V to 4 V
Vgs - Gate-Source Voltage:	20 V
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	7.2 ns
Manufacturer:	Infineon
Factory Pack Quantity:	4000
Brand:	Infineon Technologies
RoHS:	Details
Id - Continuous Drain Current:	10 A
Rise Time:	9.7 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： IRFH5210TRPBF.pdf

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Stock code :	196065
Mfg name :	Infineon Technologies
MPN :	IRFH5210TRPBF
Product description :	Single N-Channel 100 V 14.9 mOhm 39 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

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