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| Product description : Single N-Channel 40 V 5.9 mOhm 75 nC Automotive HEXFET® Power Mosfet - TO-220-3 | ||
| SPQ：50 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | TO-220-3 |
| Power - Max | 200W |
| Supplier Device Package | TO-220 |
| Gate Charge (Qg) @ Vgs | 110nC @ 5V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Packaging | Tube |
| ECCN | EAR99 |
| Rds On (Max) @ Id, Vgs | 3.1 mOhm @ 75A, 10V |
| PCN Assembly/Origin | Gen10.2 Mosfet Qualification 12/Dec/2013 |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below |
| Series | HEXFET® |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 5080pF @ 25V |
| RoHS | Lead free / RoHS Compliant |
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