IRF8010PBF specifications -Ameya360 electronic components purchase network


IRF8010PBF

ACTIVE EAR99
Product description : Single N-Channel 100 V 15 mOhm 81 nC HEXFET® Power Mosfet - TO-220-3
SPQ：50
Datasheet : IRF8010PBF.pdf

Qg - Gate Charge:	81 nC
Packaging:	Tube
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Technology:	Si
RoHS:	Details
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	100 V
Unit Weight:	0.211644 oz
Mounting Style:	Through Hole
Rds On - Drain-Source Resistance:	15 mOhms
Number of Channels:	1 Channel
Pd - Power Dissipation:	260 W
Factory Pack Quantity:	50
Brand:	Infineon Technologies
Package / Case:	TO-220-3
Id - Continuous Drain Current:	80 A
Vgs - Gate-Source Voltage:	20 V
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： IRF8010PBF.pdf

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Stock code :	193344
Mfg name :	Infineon Technologies
MPN :	IRF8010PBF
Product description :	Single N-Channel 100 V 15 mOhm 81 nC HEXFET® Power Mosfet - TO-220-3

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