| IPB60R160C6 | ||
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| 产品描述：
600V,23.8A,N channel Power MOSFET
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| 标准包装：1 | ||
| 数据手册： |
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| Power - Max | 176W |
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| Rds On (Max) @ Id, Vgs | 160 mOhm @ 11.3A, 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 23.8A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| Vgs(th) (Max) @ Id | 3.5V @ 750µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| FET Feature | Standard |
| Supplier Device Package | PG-TO263-2 |
| Gate Charge (Qg) @ Vgs | 75nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 1660pF @ 100V |
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