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| 产品描述：
Single P-Channel 200 V 3 Ohms Through Hole Power Mosfet - HVMDIP-4
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| 标准包装：1 | ||
| 数据手册： -- |
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| Minimum Operating Temperature: | - 55 C |
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| Packaging: | Tube |
| Product: | MOSFET Small Signal |
| Technology: | Si |
| Height: | 3.37 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 8 ns |
| Manufacturer: | Vishay |
| Factory Pack Quantity: | 2500 |
| Brand: | Vishay Semiconductors |
| RoHS: | Details |
| Id - Continuous Drain Current: | 400 mA |
| Rise Time: | 12 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 3 Ohms |
| Width: | 6.29 mm |
| Pd - Power Dissipation: | 1 W |
| Package / Case: | HVMDIP-4 |
| Configuration: | Single Dual Drain |
| Mounting Style: | Through Hole |
| Fall Time: | 12 ns |
| Length: | 5 mm |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 11 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 200 V |
| Transistor Type: | 1 P-Channel |
| ECCN | EAR99 |
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