SI2300DS-T1-GE3 specifications -Ameya360 electronic components purchase network


SI2300DS-T1-GE3

ACTIVE SOT-23-3 (TO-236) EAR99
Product description : Single N-Channel 30 V 68 mΩ 3 nC Surface Mount Power Mosfet - SOT-23
SPQ：1
Datasheet : SI2300DS-T1-GE3.pdf
ECAD Model:

Power - Max	1.7W
Rds On (Max) @ Id, Vgs	68 mOhm @ 2.9A, 4.5V
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	3.6A (Tc)
Part Status	Active
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Vgs(th) (Max) @ Id	1.5V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23-3
FET Feature	Standard
Supplier Device Package	SOT-23-3 (TO-236)
Gate Charge (Qg) @ Vgs	10nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	320pF @ 15V
ECCN	EAR99

Datasheet： SI2300DS-T1-GE3.pdf

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Stock code :	190943
Mfg name :	Vishay
MPN :	SI2300DS-T1-GE3
Product description :	Single N-Channel 30 V 68 mΩ 3 nC Surface Mount Power Mosfet - SOT-23

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