STH180N10F3-2
  • 量产中
  • H²PAK
  • EAR99
产品描述:
N-Channel 100 V 4.5 mOhm Surface Mount STripFET™F3 Power Mosfet -H2PAK
标准包装:1
数据手册:
  • 规格参数
  • 产品特性
  • 技术文档
  • 产品评论
Power - Max 315W
Rds On (Max) @ Id, Vgs 4.5 mOhm @ 60A, 10V
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Part Status Active
Manufacturer STMicroelectronics
Series STripFET™ III
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 175°C (TJ)
Packaging Digi-Reel®
Package / Case TO-263-3, D²Pak (2 Leads + Tab) Variant
FET Feature Standard
Supplier Device Package H²PAK
Gate Charge (Qg) @ Vgs 114.6nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 6665pF @ 25V
ECCN EAR99
数据手册:
登录之后就可发表评论

请输入下方图片中的验证码:

验证码