SI4559ADY-T1-GE3
SI4559ADY-T1-GE3
  • 量产中
产品描述:
Si4559ADY Series 60 V 58 mOhm Surface Mount Dual N & P-Channel MOSFET - SOIC-8
标准包装:1
数据手册: --
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安装类型 表面贴装
FET 类型 N 和 P 沟道
不同 Id 时的 Vgs(th)(最大值) 3V @ 250µA
不同 Vgs 时的栅极电荷(Qg) 20nC @ 10V
电流 - 连续漏极(Id)(25°C 时) 5.3A,3.9A
漏源极电压(Vdss) 60V
封装/外壳 8-SOIC(0.154",3.90mm 宽)
FET 功能 逻辑电平门
供应商器件封装 8-SO
不同 Id,Vgs 时的 Rds On(最大值) 58 毫欧 @ 4.3A,10V
不同 Vds 时的输入电容(Ciss) 665pF @ 15V
功率 - 最大值 3.1W,3.4W
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2025-08-19
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$0.94054

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2024-04-30
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2025-08-20
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$1.2282

10.200999262171170

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stock415Update On
2025-08-20
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$1.21347

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25+$1.21347
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