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| 产品描述：
150V SINGLE N-CHANNEL HEXFET POWER MOSFET
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| 标准包装：800 | ||
| 数据手册： |
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| Rds On - Drain-Source Resistance: | 82 mOhms |
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| Packaging: | Reel |
| Number of Channels: | 1 Channel |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Rise Time: | 32 ns |
| Unit Weight: | 0.139332 oz |
| Mounting Style: | SMD/SMT |
| ECCN | EAR99 |
| Forward Transconductance - Min: | 17 S |
| Fall Time: | 38 ns |
| Qg - Gate Charge: | 95 nC |
| Pd - Power Dissipation: | 3.8 W |
| Factory Pack Quantity: | 800 |
| Brand: | Infineon Technologies |
| Package / Case: | TO-252-3 |
| Id - Continuous Drain Current: | 21 A |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Configuration: | Single |
| Transistor Type: | 1 N-Channel |
| Maximum Operating Temperature: | + 175 C |
| 数据手册： |
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