IRFI4019H-117P specifications -Ameya360 electronic components purchase network


IRFI4019H-117P

ACTIVE EAR99
Product description : Transistor: N-MOSFET x2; unipolar; 150V; 8.7A; 18W; TO220FP-5
SPQ：1
Datasheet : IRFI4019H-117P.pdf

Qg - Gate Charge:	13 nC
Packaging:	Tube
Minimum Operating Temperature:	- 40 C
Technology:	Si
Height:	9.02 mm
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Fall Time:	3.1 ns
Length:	10.67 mm
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	13 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	150 V
Transistor Type:	2 N-Channel
Rds On - Drain-Source Resistance:	80 mOhms
Width:	4.83 mm
Pd - Power Dissipation:	18 W
Package / Case:	TO-220-3
Configuration:	Half-Bridge
Unit Weight:	0.211644 oz
Number of Channels:	2 Channel
Typical Turn-On Delay Time:	7 ns
Manufacturer:	Infineon
Factory Pack Quantity:	50
Brand:	Infineon Technologies
RoHS:	Details
Id - Continuous Drain Current:	8.7 A
Rise Time:	6.6 ns
ECCN	EAR99

Datasheet： IRFI4019H-117P.pdf

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Stock code :	182020
Mfg name :	Infineon Technologies
MPN :	IRFI4019H-117P
Product description :	Transistor: N-MOSFET x2; unipolar; 150V; 8.7A; 18W; TO220FP-5

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