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| 产品描述：
Single N-Channel 100 V 15 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
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| 标准包装：1 | ||
| 数据手册： |
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| FET Feature | Standard |
|---|---|
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Power - Max | 260W |
| Supplier Device Package | D2PAK |
| Gate Charge (Qg) @ Vgs | 120nC @ 10V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Online Catalog | N-Channel Standard FETs |
| Family | FETs - Single |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Packaging | Cut Tape (CT) |
| Rds On (Max) @ Id, Vgs | 15 mOhm @ 45A, 10V |
| PCN Assembly/Origin | Alternate Assembly Site 11/Nov/2013 |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
| Design Resources | IRF8010SPBF Saber Model IRF8010SPBF Spice Model |
| Series | HEXFET® |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 3830pF @ 25V |
| RoHS | Lead free / RoHS Compliant |
| 数据手册： |
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