| SI5517DU-T1-GE3 | ||
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| 产品描述：
MOSFET N/P-CH 20V 6A CHIPFET
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| 标准包装：1 | ||
| 数据手册： |
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| Minimum Operating Temperature: | - 55 C |
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| Packaging: | Reel |
| Pd - Power Dissipation: | 2.3 W |
| Tradename: | TrenchFET |
| Height: | 0.75 mm |
| Vgs - Gate-Source Voltage: | 8 V |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 20 ns, 8 ns |
| Manufacturer: | Vishay |
| Transistor Polarity: | N-Channel, P-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | SI5517DU-GE3 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 7.2 A |
| Rise Time: | 65 ns, 35 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 32 mOhms, 60 mOhms |
| Width: | 1.9 mm |
| Technology: | Si |
| Package / Case: | PowerPak-8 |
| Configuration: | 1 N-Channel, 1 P-Channel |
| Mounting Style: | SMD/SMT |
| Fall Time: | 10 ns, 55 ns |
| Length: | 3 mm |
| Series: | SI5 |
| Factory Pack Quantity: | 3000 |
| Brand: | Vishay Semiconductors |
| Typical Turn-Off Delay Time: | 40 ns, 40 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| ECCN | EAR99 |
| 数据手册： |
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