SI5517DU-T1-GE3 specifications -Ameya360 electronic components purchase network


SI5517DU-T1-GE3

ACTIVE EAR99
Product description : MOSFET N/P-CH 20V 6A CHIPFET
SPQ：1
Datasheet : SI5517DU-T1-GE3.pdf

Minimum Operating Temperature:	- 55 C
Packaging:	Reel
Pd - Power Dissipation:	2.3 W
Tradename:	TrenchFET
Height:	0.75 mm
Vgs - Gate-Source Voltage:	8 V
Number of Channels:	2 Channel
Typical Turn-On Delay Time:	20 ns, 8 ns
Manufacturer:	Vishay
Transistor Polarity:	N-Channel, P-Channel
Channel Mode:	Enhancement
Part # Aliases:	SI5517DU-GE3
RoHS:	Details
Id - Continuous Drain Current:	7.2 A
Rise Time:	65 ns, 35 ns
Maximum Operating Temperature:	+ 150 C
Rds On - Drain-Source Resistance:	32 mOhms, 60 mOhms
Width:	1.9 mm
Technology:	Si
Package / Case:	PowerPak-8
Configuration:	1 N-Channel, 1 P-Channel
Mounting Style:	SMD/SMT
Fall Time:	10 ns, 55 ns
Length:	3 mm
Series:	SI5
Factory Pack Quantity:	3000
Brand:	Vishay Semiconductors
Typical Turn-Off Delay Time:	40 ns, 40 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	20 V
Transistor Type:	1 N-Channel, 1 P-Channel
ECCN	EAR99

Datasheet： SI5517DU-T1-GE3.pdf

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