| IRLI530NPBF | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
||
| 标准包装：2000 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Qg - Gate Charge: | 22.7 nC |
|---|---|
| Packaging: | Tube |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Unit Weight: | 0.211644 oz |
| Mounting Style: | Through Hole |
| Rds On - Drain-Source Resistance: | 150 mOhms |
| Number of Channels: | 1 Channel |
| Pd - Power Dissipation: | 33 W |
| Factory Pack Quantity: | 50 |
| Brand: | Infineon Technologies |
| Package / Case: | TO-220-3 |
| Id - Continuous Drain Current: | 11 A |
| Vgs - Gate-Source Voltage: | 16 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：