IRFL014NTRPBF
  • ACTIVE
  • SOT-223
  • EAR99
Product description : Single N-Channel 55 V 0.16 Ohm 7 nC HEXFET® Power Mosfet - SOT-223
SPQ:1
Datasheet :
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Power - Max 1W
Rds On (Max) @ Id, Vgs 160 mOhm @ 1.9A, 10V
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 1.9A (Ta)
Part Status Active
Manufacturer Infineon Technologies
Series HEXFET®
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Cut Tape (CT)
Package / Case TO-261-4, TO-261AA
FET Feature Standard
Supplier Device Package SOT-223
Gate Charge (Qg) @ Vgs 11nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 190pF @ 25V
ECCN EAR99
Datasheet:
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