SI4401DDY-T1-GE3 specifications -Ameya360 electronic components purchase network


SI4401DDY-T1-GE3

ACTIVE EAR99
Product description : P-Channel 40 V 0.015 Ohm 6.3 W Surface Mount Power Mosfet - SOIC-8
SPQ：1
Datasheet : SI4401DDY-T1-GE3.pdf

Qg - Gate Charge:	64 nC
Packaging:	Reel
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	SOIC-8
Unit Weight:	0.017870 oz
Number of Channels:	1 Channel
Manufacturer:	Vishay
Transistor Polarity:	P-Channel
Brand:	Vishay Semiconductors
RoHS:	Details
Id - Continuous Drain Current:	- 16.1 A
Transistor Type:	1 P-Channel
ECCN	EAR99
Rds On - Drain-Source Resistance:	12 mOhms
Product:	MOSFET Small Signal
Pd - Power Dissipation:	6.3 W
Tradename:	TrenchFET
Configuration:	Single
Mounting Style:	SMD/SMT
Forward Transconductance - Min:	37 S
Series:	SI4
Factory Pack Quantity:	2500
Part # Aliases:	SI4401DDY-GE3
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 40 V
Maximum Operating Temperature:	+ 150 C

Datasheet： SI4401DDY-T1-GE3.pdf

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Stock code :	171808
Mfg name :	Vishay
MPN :	SI4401DDY-T1-GE3
Product description :	P-Channel 40 V 0.015 Ohm 6.3 W Surface Mount Power Mosfet - SOIC-8

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