EMD4DXV6T1G specifications -Ameya360 electronic components purchase network


EMD4DXV6T1G

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Product description : Dual Bias Resistor Transistors
SPQ：1
Datasheet : EMD4DXV6T1G.pdf

Typical Resistor Ratio:	1 at NPN, 0.21 at PNP
Packaging:	Reel
Minimum Operating Temperature:	- 55 C
Package / Case:	SOT-553-5
Configuration:	Dual
Mounting Style:	SMD/SMT
DC Current Gain hFE Max:	80
Length:	1.6 mm
DC Collector/Base Gain hfe Min:	80
Series:	EMD4DXV6
Factory Pack Quantity:	4000
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	50 V
Typical Input Resistor:	47 kOhms at NPN, 10 kOhms at PNP
Width:	1.2 mm
Pd - Power Dissipation:	357 mW
Height:	0.55 mm
Unit Weight:	0.000099 oz
Number of Channels:	2 Channel
Peak DC Collector Current:	100 mA
Continuous Collector Current:	0.1 A
Manufacturer:	ON Semiconductor
Transistor Polarity:	NPN, PNP
Brand:	ON Semiconductor
Product Category:	Bipolar Transistors - Pre-Biased
Maximum Operating Temperature:	+ 150 C

Datasheet： EMD4DXV6T1G.pdf

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Stock code :	170442
Mfg name :	onsemi
MPN :	EMD4DXV6T1G
Product description :	Dual Bias Resistor Transistors

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