MMBT6517LT1G specifications -Ameya360 electronic components purchase network


MMBT6517LT1G

ACTIVE SOT-23-3 (TO-236)
Product description : MMBT6517LT1G , NPN 高压双极晶体管, 100 mA, Vce=350 V, HFE:15, 20 MHz, 3针 SOT-23封装
SPQ：1
Datasheet : MMBT6517LT1G.pdf

Vce Saturation (Max) @ Ib, Ic	1V @ 5mA, 50mA
Package / Case	TO-236-3, SC-59, SOT-23-3
Transistor Type	NPN
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	350V
Mounting Type	Surface Mount
Packaging	Cut Tape (CT)
Frequency - Transition	200MHz
Power - Max	225mW
Supplier Device Package	SOT-23-3 (TO-236)
Online Catalog	NPN Transistors
Family	Transistors (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 50mA, 10V
RoHS	Lead free / RoHS Compliant

Datasheet： MMBT6517LT1G.pdf

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Stock code :	16485
Mfg name :	onsemi
MPN :	MMBT6517LT1G
Product description :	MMBT6517LT1G , NPN 高压双极晶体管, 100 mA, Vce=350 V, HFE:15, 20 MHz, 3针 SOT-23封装

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