SIRA02DP-T1-GE3
SIRA02DP-T1-GE3
  • ACTIVE
  • PowerPAK® SO-8
Product description : SIRA02DP-T1-GE3 , N沟道 MOSFET 晶体管, 50 A, Vds=30 V, 8针 PowerPAK SO封装
SPQ：1
Datasheet :
ECAD Model:
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Power - Max 71.4W
Rds On (Max) @ Id, Vgs 2 mOhm @ 15A, 10V
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Part Status Active
Manufacturer Vishay Siliconix
Series TrenchFET®
Vgs(th) (Max) @ Id 2.2V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Tape & Reel (TR)
Package / Case PowerPAK® SO-8
FET Feature Standard
Supplier Device Package PowerPAK® SO-8
Gate Charge (Qg) @ Vgs 117nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 6150pF @ 15V
Datasheet：
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  • P2P:A direct drop-in replacement or second source option. Possible minor parametric differences. No change required in most designs.
  • Functional Equivalent:A direct replacement or second source option. Possible major parametric differences. Changes may be required in some designs.
  • Contain: The functions that one IC can achieve contain the functions that another IC can achieve.
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