IRFZ44EPBF
  • ACTIVE
  • TO-220AB
  • EAR99
Product description : Single N-Channel 60 V 0.023 Ohm 60 nC HEXFET® Power Mosfet - TO-220-3
SPQ:1
Datasheet :
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FET Feature Standard
Package / Case TO-220-3
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 48A (Tc)
Part Status Active
Manufacturer Infineon Technologies
Series HEXFET®
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 175°C (TJ)
Packaging Tube
Rds On (Max) @ Id, Vgs 23 mOhm @ 29A, 10V
Power - Max 110W
Supplier Device Package TO-220AB
Gate Charge (Qg) @ Vgs 60nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Through Hole
Input Capacitance (Ciss) @ Vds 1360pF @ 25V
ECCN EAR99
Datasheet:
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