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| 产品描述：
Single N-Channel 55 V 0.006 Ohm 190 nC 300 W Silicon SMT Mosfet - TO-263-3
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| 标准包装：1 | ||
| 数据手册： |
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| Power - Max | 300W |
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| Rds On (Max) @ Id, Vgs | 6 mOhm @ 60A, 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Part Status | Active |
| Manufacturer | STMicroelectronics |
| Series | STripFET™ II |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Cut Tape (CT) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| FET Feature | Standard |
| Supplier Device Package | D2PAK |
| Gate Charge (Qg) @ Vgs | 190nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 4400pF @ 25V |
| ECCN | EAR99 |
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