| SI3552DV-T1-E3 | ||
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| 产品描述：
Dual N & P Channel 30 V 0.105/0.2 Ohms Surface Mount Power Mosfet - TSOP-6
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| 标准包装：1 | ||
| 数据手册： |
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| Rds On - Drain-Source Resistance: | 105 mOhms, 175 mOhms |
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| Width: | 1.65 mm |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TSOP-6 |
| Configuration: | 1 N-Channel, 1 P-Channel |
| Unit Weight: | 0.000705 oz |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 7 ns, 8 ns |
| Manufacturer: | Vishay |
| Transistor Polarity: | N-Channel, P-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | SI3552DV-E3 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 2.5 A |
| Rise Time: | 9 ns, 12 ns |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Reel |
| Product: | MOSFET Small Signal |
| Pd - Power Dissipation: | 1.15 W |
| Tradename: | TrenchFET |
| Height: | 1 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 5 ns, 7 ns |
| Length: | 3.05 mm |
| Series: | SI3 |
| Factory Pack Quantity: | 3000 |
| Brand: | Vishay Semiconductors |
| Typical Turn-Off Delay Time: | 13 ns, 12 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| ECCN | EAR99 |
| 数据手册： |
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