Qg - Gate Charge: | 22 nC |
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Packaging: | Tube |
Manufacturer: | Infineon |
Transistor Polarity: | N-Channel |
Technology: | Si |
RoHS: | Details |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | 20 V |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
Rds On - Drain-Source Resistance: | 12.6 mOhms |
Number of Channels: | 1 Channel |
Pd - Power Dissipation: | 71 W |
Factory Pack Quantity: | 75 |
Brand: | Infineon Technologies |
Package / Case: | TO-252-3 |
Id - Continuous Drain Current: | 43 A |
Configuration: | Single |
Unit Weight: | 0.139332 oz |
Mounting Style: | SMD/SMT |
数据手册: |
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