NGTB50N120FL2WG specifications -Ameya360 electronic components purchase network


NGTB50N120FL2WG

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Product description : ON Semiconductor NGTB50N120FL2WG, N沟道 IGBT 晶体管, 100 A, Vce=1200 V, 1MHz, 3针 TO-247封装
SPQ：1
Datasheet : NGTB50N120FL2WG.pdf

Collector-Emitter Saturation Voltage:	2.2 V
Manufacturer:	ON Semiconductor
Pd - Power Dissipation:	535 W
Minimum Operating Temperature:	- 55 C
Brand:	ON Semiconductor
Package / Case:	TO-247
Product Category:	IGBT Transistors
Configuration:	Single
Mounting Style:	Through Hole
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Series:	NGTB50N120FL2
Continuous Collector Current at 25 C:	100 A
Factory Pack Quantity:	30
RoHS:	Details
Gate-Emitter Leakage Current:	200 nA
Collector- Emitter Voltage VCEO Max:	1200 V
Unit Weight:	0.229281 oz
Maximum Gate Emitter Voltage:	30 V

Datasheet： NGTB50N120FL2WG.pdf

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Stock code :	155984
Mfg name :	onsemi
MPN :	NGTB50N120FL2WG
Product description :	ON Semiconductor NGTB50N120FL2WG, N沟道 IGBT 晶体管, 100 A, Vce=1200 V, 1MHz, 3针 TO-247封装

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