CSD16403Q5A specifications -Ameya360 electronic components purchase network


CSD16403Q5A

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Product description : CSD16403Q5A , N沟道 MOSFET 晶体管, 100 A, Vds=25 V, 8针 SON封装
SPQ：2500
Datasheet : CSD16403Q5A.pdf
ECAD Model:

Qg - Gate Charge:	13.3 nC
Packaging:	Reel
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	VSON-FET-8
Height:	1 mm
Vgs - Gate-Source Voltage:	16 V
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	11.8 ns
Forward Transconductance - Min:	91 S
Series:	CSD16403Q5A
Factory Pack Quantity:	2500
Brand:	Texas Instruments
RoHS:	Details
Id - Continuous Drain Current:	28 A
Rise Time:	18.3 ns
Maximum Operating Temperature:	+ 150 C
Rds On - Drain-Source Resistance:	3.7 mOhms
Width:	5.75 mm
Pd - Power Dissipation:	3.1 W
Tradename:	NexFET
Vgs th - Gate-Source Threshold Voltage:	1.6 V
Configuration:	Single
Mounting Style:	SMD/SMT
Fall Time:	9.2 ns
Length:	4.9 mm
Manufacturer:	Texas Instruments
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	15.2 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	25 V
Transistor Type:	1 N-Channel

Datasheet： CSD16403Q5A.pdf

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Stock code :	155309
Mfg name :	Texas Instruments
MPN :	CSD16403Q5A
Product description :	CSD16403Q5A , N沟道 MOSFET 晶体管, 100 A, Vds=25 V, 8针 SON封装

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