AUIRF7342QTR
  • ACTIVE
  • EAR99
Product description : Dual P-Channel 55 V 0.17 Ohm 38 nC Automotive HEXFET® Power Mosfet - SOIC-8
SPQ:4000
Datasheet :
ECAD Model:
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Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 105 mOhms
Pd - Power Dissipation: 2 W
Package / Case: SOIC-8
Configuration: Dual
Unit Weight: 0.017870 oz
Number of Channels: 2 Channel
Typical Turn-On Delay Time: 14 ns
Manufacturer: Infineon
Factory Pack Quantity: 4000
Typical Turn-Off Delay Time: 43 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: - 55 V
Transistor Type: 2 P-Channel
ECCN EAR99
Qg - Gate Charge: 26 nC
Packaging: Reel
Technology: Si
Vgs th - Gate-Source Threshold Voltage: - 3 V
Vgs - Gate-Source Voltage: 20 V
Mounting Style: SMD/SMT
Fall Time: 22 ns
Forward Transconductance - Min: 3.3 S
Transistor Polarity: P-Channel
Brand: Infineon / IR
RoHS:  Details
Id - Continuous Drain Current: - 3.4 A
Rise Time: 10 ns
Maximum Operating Temperature: + 150 C
Datasheet:
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