AUIRF7342QTR specifications -Ameya360 electronic components purchase network


AUIRF7342QTR

ACTIVE EAR99
Product description : Dual P-Channel 55 V 0.17 Ohm 38 nC Automotive HEXFET® Power Mosfet - SOIC-8
SPQ：1
Datasheet : AUIRF7342QTR.pdf

Minimum Operating Temperature:	- 55 C
Rds On - Drain-Source Resistance:	105 mOhms
Pd - Power Dissipation:	2 W
Package / Case:	SOIC-8
Configuration:	Dual
Unit Weight:	0.017870 oz
Number of Channels:	2 Channel
Typical Turn-On Delay Time:	14 ns
Manufacturer:	Infineon
Factory Pack Quantity:	4000
Typical Turn-Off Delay Time:	43 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 55 V
Transistor Type:	2 P-Channel
ECCN	EAR99
Qg - Gate Charge:	26 nC
Packaging:	Reel
Technology:	Si
Vgs th - Gate-Source Threshold Voltage:	- 3 V
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	SMD/SMT
Fall Time:	22 ns
Forward Transconductance - Min:	3.3 S
Transistor Polarity:	P-Channel
Brand:	Infineon / IR
RoHS:	Details
Id - Continuous Drain Current:	- 3.4 A
Rise Time:	10 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： AUIRF7342QTR.pdf

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Stock code :	154985
Mfg name :	Infineon Technologies
MPN :	AUIRF7342QTR
Product description :	Dual P-Channel 55 V 0.17 Ohm 38 nC Automotive HEXFET® Power Mosfet - SOIC-8

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