SIHG22N60E-GE3
  • ACTIVE
  • EAR99
Product description : E-Series N-Channel 600 V 227 W 0.18 Ω 86 nC Flange Mount Power Mosfet - TO-247AC
SPQ:25
Datasheet : --
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Qg - Gate Charge: 86 nC
Packaging: Tube
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: TO-247-3
Configuration: Single
Unit Weight: 1.340411 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 18 ns
Manufacturer: Vishay
Transistor Polarity: N-Channel
Brand: Vishay Semiconductors
RoHS:  Details
Id - Continuous Drain Current: 21 A
Rise Time: 68 ns
Transistor Type: 1 N-Channel
ECCN EAR99
Rds On - Drain-Source Resistance: 180 mOhms
Product: MOSFET
Pd - Power Dissipation: 227 W
Tradename: TrenchFET
Vgs th - Gate-Source Threshold Voltage: 4 V
Vgs - Gate-Source Voltage: 20 V
Mounting Style: Through Hole
Fall Time: 54 ns
Forward Transconductance - Min: 6.4 S
Series: E
Factory Pack Quantity: 500
Typical Turn-Off Delay Time: 59 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 600 V
Type: E Series Power MOSFET
Maximum Operating Temperature: + 150 C
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