Qg - Gate Charge: | 86 nC |
---|---|
Packaging: | Tube |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Package / Case: | TO-247-3 |
Configuration: | Single |
Unit Weight: | 1.340411 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 18 ns |
Manufacturer: | Vishay |
Transistor Polarity: | N-Channel |
Brand: | Vishay Semiconductors |
RoHS: | Details |
Id - Continuous Drain Current: | 21 A |
Rise Time: | 68 ns |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
Rds On - Drain-Source Resistance: | 180 mOhms |
Product: | MOSFET |
Pd - Power Dissipation: | 227 W |
Tradename: | TrenchFET |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Vgs - Gate-Source Voltage: | 20 V |
Mounting Style: | Through Hole |
Fall Time: | 54 ns |
Forward Transconductance - Min: | 6.4 S |
Series: | E |
Factory Pack Quantity: | 500 |
Typical Turn-Off Delay Time: | 59 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Type: | E Series Power MOSFET |
Maximum Operating Temperature: | + 150 C |