SIHG22N60E-GE3 specifications -Ameya360 electronic components purchase network


SIHG22N60E-GE3

ACTIVE EAR99
Product description : E-Series N-Channel 600 V 227 W 0.18 Ω 86 nC Flange Mount Power Mosfet - TO-247AC
SPQ：25
Datasheet : --
ECAD Model:

Qg - Gate Charge:	86 nC
Packaging:	Tube
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-247-3
Configuration:	Single
Unit Weight:	1.340411 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	18 ns
Manufacturer:	Vishay
Transistor Polarity:	N-Channel
Brand:	Vishay Semiconductors
RoHS:	Details
Id - Continuous Drain Current:	21 A
Rise Time:	68 ns
Transistor Type:	1 N-Channel
ECCN	EAR99
Rds On - Drain-Source Resistance:	180 mOhms
Product:	MOSFET
Pd - Power Dissipation:	227 W
Tradename:	TrenchFET
Vgs th - Gate-Source Threshold Voltage:	4 V
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Fall Time:	54 ns
Forward Transconductance - Min:	6.4 S
Series:	E
Factory Pack Quantity:	500
Typical Turn-Off Delay Time:	59 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	600 V
Type:	E Series Power MOSFET
Maximum Operating Temperature:	+ 150 C

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Stock code :	154481
Mfg name :	Siliconix/Vishay
MPN :	SIHG22N60E-GE3
Product description :	E-Series N-Channel 600 V 227 W 0.18 Ω 86 nC Flange Mount Power Mosfet - TO-247AC

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