Width: | 4.7 mm |
---|---|
Rds On - Drain-Source Resistance: | 600 mOhms |
Pd - Power Dissipation: | 60 W |
Package / Case: | TO-220-3 |
Configuration: | Single |
Unit Weight: | 0.211644 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 9.6 ns |
Manufacturer: | Vishay |
Factory Pack Quantity: | 1000 |
Brand: | Vishay Semiconductors |
RoHS: | Details |
Id - Continuous Drain Current: | 6.8 A |
Rise Time: | 29 ns |
Maximum Operating Temperature: | + 175 C |
Packaging: | Tube |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Height: | 9.01 mm |
Vgs - Gate-Source Voltage: | 20 V |
Mounting Style: | Through Hole |
Fall Time: | 25 ns |
Length: | 10.41 mm |
Transistor Polarity: | P-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 21 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | - 100 V |
Transistor Type: | 1 P-Channel |
ECCN | EAR99 |