IRF1405STRRPBF specifications -Ameya360 electronic components purchase network


IRF1405STRRPBF

ACTIVE EAR99
Product description : Single N-Channel 55V 5.3 mOhm 170 nC HEXFET® Power Mosfet - D2PAK
SPQ：1
Datasheet : IRF1405STRRPBF.pdf

Packaging:	Reel
Qg - Gate Charge:	170 nC
Pd - Power Dissipation:	200 W
Package / Case:	TO-252-3
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	SMD/SMT
Fall Time:	110 ns
Manufacturer:	Infineon
Factory Pack Quantity:	800
Brand:	Infineon Technologies
RoHS:	Details
Id - Continuous Drain Current:	131 A
Rise Time:	190 ns
Type:	Automotive Mosfet
ECCN	EAR99
Rds On - Drain-Source Resistance:	5.3 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Configuration:	Single
Unit Weight:	0.139332 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	13 ns
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	130 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	55 V
Transistor Type:	1 N-Channel
Maximum Operating Temperature:	+ 175 C

Datasheet： IRF1405STRRPBF.pdf

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Stock code :	152161
Mfg name :	Infineon Technologies
MPN :	IRF1405STRRPBF
Product description :	Single N-Channel 55V 5.3 mOhm 170 nC HEXFET® Power Mosfet - D2PAK

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