SI4477DY-T1-GE3
SI4477DY-T1-GE3
  • 量产中
  • 8-SO
  • EAR99
产品描述：
Single P-Channel 20 V 0.0062 Ω 190 nC Surface Mount Mosfet - SOIC-8
标准包装：1
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Power - Max 6.6W
Rds On (Max) @ Id, Vgs 6.2 mOhm @ 18A, 4.5V
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 26.6A (Tc)
Part Status Active
Manufacturer Vishay Siliconix
Series TrenchFET®
Vgs(th) (Max) @ Id 1.5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Cut Tape (CT)
Package / Case 8-SOIC (0.154", 3.90mm Width)
FET Feature Standard
Supplier Device Package 8-SO
Gate Charge (Qg) @ Vgs 190nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET P-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 4600pF @ 10V
ECCN EAR99
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stock15000Update On
2025-06-18
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2025-01-27
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stock5000Update On
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