| SI4477DY-T1-GE3 | ||
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| 产品描述：
Single P-Channel 20 V 0.0062 Ω 190 nC Surface Mount Mosfet - SOIC-8
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| 标准包装：2500 | ||
| 数据手册： |
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| Power - Max | 6.6W |
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| Rds On (Max) @ Id, Vgs | 6.2 mOhm @ 18A, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 26.6A (Tc) |
| Part Status | Active |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| FET Feature | Standard |
| Supplier Device Package | 8-SO |
| Gate Charge (Qg) @ Vgs | 190nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 4600pF @ 10V |
| ECCN | EAR99 |
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