STD65N55F3 specifications -Ameya360 electronic components purchase network


STD65N55F3

ACTIVE EAR99
Product description : N-Channel 55 V 8.5 mOhm Surface Mount STripFET Power MosFet - TO-252
SPQ：2500
Datasheet : STD65N55F3.pdf

Qg - Gate Charge:	33.5 nC
Packaging:	Reel
Minimum Operating Temperature:	- 55 C
Technology:	Si
Vgs th - Gate-Source Threshold Voltage:	4 V
Configuration:	Single
Unit Weight:	0.139332 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	20 ns
Forward Transconductance - Min:	50 S
Series:	N-channel STripFET
Factory Pack Quantity:	2500
Brand:	STMicroelectronics
RoHS:	Details
Id - Continuous Drain Current:	80 A
Rise Time:	50 ns
Maximum Operating Temperature:	+ 175 C
Rds On - Drain-Source Resistance:	8.5 mOhms
Width:	6.2 mm
Pd - Power Dissipation:	110 W
Package / Case:	TO-252-3
Height:	2.4 mm
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	SMD/SMT
Fall Time:	11.5 ns
Length:	6.6 mm
Manufacturer:	STMicroelectronics
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	35 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	55 V
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： STD65N55F3.pdf

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Stock code :	147689
Mfg name :	STMicroelectronics
MPN :	STD65N55F3
Product description :	N-Channel 55 V 8.5 mOhm Surface Mount STripFET Power MosFet - TO-252

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