BUK7Y9R9-80EX specifications -Ameya360 electronic components purchase network


BUK7Y9R9-80EX

ACTIVE ECL99
Product description : MOSFET N-CH 80V 89A LFPAK
SPQ：1500
Datasheet : BUK7Y9R9-80EX.pdf

Minimum Operating Temperature:	- 55 C
Rds On - Drain-Source Resistance:	7.3 mOhms
Pd - Power Dissipation:	195 W
Package / Case:	SOT-669-4
Configuration:	Single
Mounting Style:	SMD/SMT
Fall Time:	21 ns
Manufacturer:	NXP
Factory Pack Quantity:	1500
Brand:	NXP Semiconductors
RoHS:	Details
Id - Continuous Drain Current:	89 A
Rise Time:	23 ns
Maximum Operating Temperature:	+ 175 C
Qg - Gate Charge:	51.6 nC
Packaging:	Reel
Technology:	Si
Vgs th - Gate-Source Threshold Voltage:	3 V
Vgs - Gate-Source Voltage:	20 V
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	15 ns
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	34 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	80 V
Transistor Type:	1 N-Channel
ECCN	ECL99

Datasheet： BUK7Y9R9-80EX.pdf

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