| MJD45H11TM | ||
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| 产品描述：
MJD Series PNP 1.75 W 80 V 8 A SMT Epitaxial Silicon Transistor - TO-252-3
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| 标准包装：1 | ||
| 数据手册： |
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| Packaging: | Reel |
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| Width: | 6.1 mm |
| Minimum Operating Temperature: | - 55 C |
| Package / Case: | TO-252 |
| Gain Bandwidth Product fT: | 40 MHz |
| Unit Weight: | 0.009184 oz |
| Emitter- Base Voltage VEBO: | - 5 V |
| DC Current Gain hFE Max: | 60 |
| Length: | 6.6 mm |
| Manufacturer: | Fairchild Semiconductor |
| Factory Pack Quantity: | 2500 |
| Part # Aliases: | MJD45H11TM_NL |
| Product Category: | Bipolar Transistors - BJT |
| Maximum Operating Temperature: | + 150 C |
| Collector- Base Voltage VCBO: | - 5 V |
| Collector-Emitter Saturation Voltage: | - 1 V |
| Pd - Power Dissipation: | 20 W |
| Height: | 2.3 mm |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Maximum DC Collector Current: | 8 A |
| Continuous Collector Current: | - 8 A |
| DC Collector/Base Gain hfe Min: | 40 |
| Transistor Polarity: | PNP |
| Brand: | Fairchild Semiconductor |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | - 80 V |
| ECCN | EAR99 |
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