MJD45H11TM specifications -Ameya360 electronic components purchase network


MJD45H11TM

ACTIVE EAR99
Product description : MJD Series PNP 1.75 W 80 V 8 A SMT Epitaxial Silicon Transistor - TO-252-3
SPQ：1
Datasheet : MJD45H11TM.pdf

Packaging:	Reel
Width:	6.1 mm
Minimum Operating Temperature:	- 55 C
Package / Case:	TO-252
Gain Bandwidth Product fT:	40 MHz
Unit Weight:	0.009184 oz
Emitter- Base Voltage VEBO:	- 5 V
DC Current Gain hFE Max:	60
Length:	6.6 mm
Manufacturer:	Fairchild Semiconductor
Factory Pack Quantity:	2500
Part # Aliases:	MJD45H11TM_NL
Product Category:	Bipolar Transistors - BJT
Maximum Operating Temperature:	+ 150 C
Collector- Base Voltage VCBO:	- 5 V
Collector-Emitter Saturation Voltage:	- 1 V
Pd - Power Dissipation:	20 W
Height:	2.3 mm
Configuration:	Single
Mounting Style:	SMD/SMT
Maximum DC Collector Current:	8 A
Continuous Collector Current:	- 8 A
DC Collector/Base Gain hfe Min:	40
Transistor Polarity:	PNP
Brand:	Fairchild Semiconductor
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	- 80 V
ECCN	EAR99

Datasheet： MJD45H11TM.pdf

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Stock code :	145427
Mfg name :	onsemi
MPN :	MJD45H11TM
Product description :	MJD Series PNP 1.75 W 80 V 8 A SMT Epitaxial Silicon Transistor - TO-252-3

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