IRFPF40PBF | ||
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产品描述:
Transistor: N-MOSFET; unipolar; 900V; 2.9A; 150W; TO247AC
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标准包装:1 | ||
数据手册: -- |
Width: | 5.31 mm |
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Rds On - Drain-Source Resistance: | 2.5 Ohms |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Vgs th - Gate-Source Threshold Voltage: | 2 V to 4 V |
Configuration: | Single |
Unit Weight: | 1.340411 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 15 ns |
Forward Transconductance - Min: | 2.5 S |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 110 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 900 V |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
Packaging: | Tube |
Qg - Gate Charge: | 120 nC |
Pd - Power Dissipation: | 150 W |
Package / Case: | TO-247-3 |
Height: | 20.7 mm |
Vgs - Gate-Source Voltage: | 20 V |
Mounting Style: | Through Hole |
Fall Time: | 32 ns |
Length: | 15.87 mm |
Manufacturer: | Vishay |
Factory Pack Quantity: | 500 |
Brand: | Vishay Semiconductors |
RoHS: | Details |
Id - Continuous Drain Current: | 4.7 A |
Rise Time: | 36 ns |
Maximum Operating Temperature: | + 150 C |
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