SI5403DC-T1-GE3 specifications -Ameya360 electronic components purchase network


SI5403DC-T1-GE3

ACTIVE 1206-8 ChipFET™ EAR99
Product description : P-Channel 30 V 0.03 Ohms Surface Mount Power Mosfet - SMD-8
SPQ：1
Datasheet : SI5403DC-T1-GE3.pdf

Power - Max	6.3W
Rds On (Max) @ Id, Vgs	30 mOhm @ 7.2A, 10V
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Part Status	Active
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Vgs(th) (Max) @ Id	3V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tape & Reel (TR)
Package / Case	8-SMD, Flat Lead
FET Feature	Standard
Supplier Device Package	1206-8 ChipFET™
Gate Charge (Qg) @ Vgs	42nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET P-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	1340pF @ 15V
ECCN	EAR99

Datasheet： SI5403DC-T1-GE3.pdf

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Stock code :	144359
Mfg name :	Vishay
MPN :	SI5403DC-T1-GE3
Product description :	P-Channel 30 V 0.03 Ohms Surface Mount Power Mosfet - SMD-8

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