CSD16556Q5B specifications -Ameya360 electronic components purchase network


CSD16556Q5B

ACTIVE
Product description : MOSFET N-CH 25V 100A 8VSON
SPQ：1
Datasheet : CSD16556Q5B.pdf
ECAD Model:

Packaging:	Reel
Qg - Gate Charge:	37 nC
Pd - Power Dissipation:	3.2 W
Tradename:	NexFET
Vgs th - Gate-Source Threshold Voltage:	1.4 V
Vgs - Gate-Source Voltage:	20 V
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	17 ns
Manufacturer:	Texas Instruments
Transistor Polarity:	N-Channel
Brand:	Texas Instruments
RoHS:	Details
Id - Continuous Drain Current:	40 A
Rise Time:	34 ns
Maximum Operating Temperature:	+ 150 C
Rds On - Drain-Source Resistance:	1.5 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	VSON-Clip-8
Configuration:	Single
Mounting Style:	SMD/SMT
Fall Time:	13 ns
Forward Transconductance - Min:	2 S
Series:	CSD16556Q5B
Factory Pack Quantity:	2500
Typical Turn-Off Delay Time:	25 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	25 V
Transistor Type:	1 N-Channel

Datasheet： CSD16556Q5B.pdf

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