IRF830ALPBF specifications -Ameya360 electronic components purchase network


IRF830ALPBF

ACTIVE EAR99
Product description : IRF830AL Series N-Channel 500 V 1.4 Ohm Through Hole Power Mosfet - TO-262
SPQ：1
Datasheet : IRF830ALPBF.pdf

Minimum Operating Temperature:	- 55 C
Packaging:	Tube
Pd - Power Dissipation:	3.1 W
Package / Case:	TO-262-3
Configuration:	Single
Unit Weight:	0.084199 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	10 ns
Manufacturer:	Vishay
Factory Pack Quantity:	1000
Brand:	Vishay Semiconductors
RoHS:	Details
Id - Continuous Drain Current:	5 A
Rise Time:	21 ns
Maximum Operating Temperature:	+ 150 C
Rds On - Drain-Source Resistance:	1.4 Ohms
Width:	4.7 mm
Technology:	Si
Height:	9.65 mm
Vgs - Gate-Source Voltage:	30 V
Mounting Style:	Through Hole
Fall Time:	15 ns
Length:	10.41 mm
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	21 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	500 V
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： IRF830ALPBF.pdf

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Stock code :	140648
Mfg name :	Vishay
MPN :	IRF830ALPBF
Product description :	IRF830AL Series N-Channel 500 V 1.4 Ohm Through Hole Power Mosfet - TO-262

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