| TPS1101D | ||
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| 产品描述：
TPS1101D , P沟道 MOSFET 晶体管, 2.3 A, Vds=15 V, 8针 SOIC封装
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| 标准包装：75 | ||
| 数据手册： | ||
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- 规格参数
- 产品特性
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| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Drain to Source Voltage (Vdss) | 15V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Family | FETs - Single |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| RoHS | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 90 mOhm @ 2.5A, 10V |
| Power - Max | 791mW |
| Supplier Device Package | 8-SOIC |
| Gate Charge (Qg) @ Vgs | 11.25nC @ 10V |
| Online Catalog | P-Channel Logic Level Gate FETs |
| Mounting Type | Surface Mount |
| Packaging | Tube |
| 数据手册： |
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