| NTMD4820NR2G | ||
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| 产品描述：
NTMD4820NR2G , N沟道 MOSFET 晶体管, 8 A, Vds=30 V, 8针 SOIC封装
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| 标准包装：2500 | ||
| 数据手册： |
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| Qg - Gate Charge: | 7.7 nC |
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| Packaging: | Reel |
| Product: | MOSFET Small Signal |
| Pd - Power Dissipation: | 1.28 W |
| Package / Case: | SOIC-8 |
| Configuration: | Single Quad Drain Triple Source |
| Unit Weight: | 0.006596 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 9.4 ns |
| Forward Transconductance - Min: | 21 S |
| Series: | NTMD4820N |
| Factory Pack Quantity: | 2500 |
| Brand: | ON Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | 6.4 A |
| Rise Time: | 4 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 20 mOhms |
| Width: | 4 mm |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Height: | 1.5 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 4 ns |
| Length: | 5 mm |
| Manufacturer: | ON Semiconductor |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 21 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| 数据手册： |
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