| STP10NK80Z | ||
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| 产品描述：
Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO220-3
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| 标准包装：1 | ||
| 数据手册： |
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| Qg - Gate Charge: | 72 nC |
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| Packaging: | Tube |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Height: | 9.15 mm |
| Vgs - Gate-Source Voltage: | 30 V |
| Mounting Style: | Through Hole |
| Fall Time: | 17 ns |
| Length: | 10.4 mm |
| Manufacturer: | STMicroelectronics |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 65 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Type: | MOSFET |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 900 mOhms |
| Width: | 4.6 mm |
| Pd - Power Dissipation: | 160 W |
| Package / Case: | TO-220-3 |
| Configuration: | Single |
| Unit Weight: | 0.050717 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 30 ns |
| Forward Transconductance - Min: | 9.6 S |
| Series: | N-channel MDmesh |
| Factory Pack Quantity: | 1000 |
| Brand: | STMicroelectronics |
| RoHS: | Details |
| Id - Continuous Drain Current: | 9 A |
| Rise Time: | 20 ns |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| 数据手册： |
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